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FMMT620TC датащи(PDF) 4 Page - Zetex Semiconductors

номер детали FMMT620TC
подробное описание детали  SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
PDF  6 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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FMMT620TC датащи(HTML) 4 Page - Zetex Semiconductors

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ISSUE 1 - JANUARY 2001
FMMT620
4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
100
180
V
IC=100 A
Collector-Emitter Breakdown
Voltage
V(BR)CEO
80
110
V
IC=10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO
78
V
IE=100 A
Collector Cut-Off Current
ICBO
100
nA
VCB=80V
Emitter Cut-Off Current
IEBO
100
nA
VEB=5.5V
Collector Emitter Cut-Off Current
ICES
100
nA
VCES=80V
Collector-Emitter Saturation
Voltage
VCE(sat)
15
45
145
160
20
60
185
200
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=0.5A, IB=50mA*
IC=1A, IB=20mA*
IC=1.5A, IB=50mA*
Base-Emitter Saturation Voltage
VBE(sat)
0.86
1.0
V
IC=1.5A, IB=50mA*
Base-Emitter Turn-On Voltage
VBE(on)
0.82
0.95
V
IC=1.5A, VCE=2V*
Static Forward Current Transfer
Ratio
hFE
200
300
110
60
20
450
450
170
90
30
10
900
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=1.5A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
Transition Frequency
fT
100
160
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
11.5
18
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
86
ns
VCC=10V, IC=500mA
IB1=IB2=25mA
Turn-Off Time
t(off)
1128
ns
*Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%



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