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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CDBFR42 датащи(PDF) 1 Page - Comchip Technology |
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CDBFR42 датащи(HTML) 1 Page - Comchip Technology |
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1 / 2 page  Page 1 QW-A1083 Symbol Typ Parameter Conditions Min Max Unit Forward voltage Reverse current Capacitance between terminals Reverse recovery time VR = 25V f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 ohm IR CT Trr uA pF nS 5 10 0.5 CDBFR42/43 O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Parameter Conditions Min Max Unit RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 4 0.5 200 21 30 30 TSTG Tj Storage temperature Junction temperature OC OC +125 +125 -55 PD Power Dissipation Thermal resistance junction to ambient air mW OC/W 200 500 R JA CDBFR42/43 CDBFR42 CDBFR43 CDBFR42 CDBFR43 IF = 10mA IF = 200mA IF = 50mA IF = 2mA IF = 15mA VF V 0.4 1 0.65 0.33 0.45 REV:A 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.040(1.00) Typ. SMD Schottky Barrier Diode Io = 200 mA VR = 30 Volts RoHS Device Features -Low forward voltage. -Designed for mounting on small surface. -Extremely thin / leadless package. -Majority carrier conduction. Mechanical data -Case: 1005/SOD-323F standard package molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight: 0.006 gram(approx.). 1005/SOD-323F |
Аналогичный номер детали - CDBFR42 |
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Аналогичное описание - CDBFR42 |
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ссылки URL |
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