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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LM3488MM датащи(PDF) 20 Page - National Semiconductor (TI) |
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LM3488MM датащи(HTML) 20 Page - National Semiconductor (TI) |
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20 / 24 page  Designing SEPIC Using LM3488 (Continued) The duty cycle of a SEPIC is given by: In the above equation, V Q is the on-state voltage of the MOSFET, Q, and V DIODE is the forward voltage drop of the diode. POWER MOSFET SELECTION As in boost converter, the parameters governing the selec- tion of the MOSFET are the minimum threshold voltage, V TH(MIN), the on-resistance, RDS(ON), the total gate charge, Q g, the reverse transfer capacitance, CRSS, and the maxi- mum drain to source voltage, V DS(MAX). The peak switch voltage in a SEPIC is given by: V SW(PEAK) =VIN +VOUT +VDIODE The selected MOSFET should satisfy the condition: V DS(MAX) > VSW(PEAK) The peak switch current is given by: The rms current through the switch is given by: POWER DIODE SELECTION The Power diode must be selected to handle the peak current and the peak reverse voltage. In a SEPIC, the diode peak current is the same as the switch peak current. The off-state voltage or peak reverse voltage of the diode is V IN +V OUT. Similar to the boost converter, the average diode current is equal to the output current. Schottky diodes are recommended. SELECTION OF INDUCTORS L1 AND L2 Proper selection of the inductors L1 and L2 to maintain constant current mode requires calculations of the following parameters. Average current in the inductors: I L2AVE =IOUT Peak to peak ripple current, to calculate core loss if neces- sary: maintains the condition I L > ∆i L to ensure constant current mode. 10138844 FIGURE 14. Typical SEPIC Converter www.national.com 20 |
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