2N3195 datasheet(1/2 Pages) ISC

номер детали	2N3195

подробное описание детали	Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2N3195

DESCRIPTION

·

Excellent Safe Operating Area

·

With TO-3 package

·

Low collector saturation voltage

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

For medium-speed switching and amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.17

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-10

V

IC

Collector Current-Continuous

-5

A

PC

Collector Power Dissipation@TC=25℃

75

W

TJ, Tstg

Operating and Storage Junction

Temperature Range

-65~+200

℃

Аналогичный номер детали - 2N3195

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List of Unclassifed Man...	2N319	267Kb / 3P	alloy-junction germanium transistors
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Аналогичное описание - 2N3195

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