2SC5916

Transistor

2/3

!

!

!

!Electrical characteristics (Ta=25

°C)

Parameter

Symbol

fT

Min.

30

30

6

−

−

−

120

−

−

−

−

−

−

−

250

−−

15

25

−

−

−

1.0

1.0

−

200

400

390

−

−

−

V

=100

µA

=1mA

=100

µA

=20V

=4V

=2A

=200mA

=

−200mA

−25V

−100mA, f=10MHz

V

V

µA

µA

MHz

mV

pF

ns

−

100

−

ns

Tf

−

20

−

ns

Typ.

Max.

Unit

Conditions

Collector

−base breakdown voltage

Collector cut-off current

DC current gain

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Emitter cut-off current

Collector

−emitter staturation voltage

Collector

−emitter breakdown voltage

Emitter

−base breakdown voltage

!

!

!

QR

120-270

180-390

!

!

!

!Electrical characteristic curves

Fig.1 Safe operating area

Single non repoetitive pulse

DC

1ms

10ms

110

0.1

100

10

1

0.1

0.01

100ms

Fig.2 Switching Time

1

0.01

0.1

10

1000

100

10

Ta

=25°C

=25V

=10/1

Tstg

Tf

Ton

Fig.3 DC current gain vs. collector

current

0.001

0.01

0.1

10

1

1

10

100

1000

Ta

=125°C

Ta

=25°C

Ta

=−40°C

=2V

0.001

0.01

0.1

10

1

1

10

100

1000

=5V

=3V

=2V

Fig.4 DC current gain vs. collector

current

Ta

=25°C

0.001

0.01

0.1

0.01

0.1

1

10

(A)

10

1

Fig.5 Collector-emitter saturation voltage

vs. collector current

=10/1

Ta

=125°C

Ta

=25°C

Ta

=−40°C

0.001

0.1

0.01

10

1

0.01

0.1

1

10

(A)

Fig.6 Collector-emitter saturation voltage

vs. collector current

=10/1

=20/1

Ta

=25°C