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HMC565 датащи(PDF) 4 Page - Micross Components |
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HMC565 датащи(HTML) 4 Page - Micross Components |
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4 / 9 page ![]() 1 1 - 84 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC565 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz v02.0209 General Description Features Functional Diagram The HMC565 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 6 to 20 GHz. The HMC565 features 22 dB of small signal gain, 2.3 dB of noise figure and has a consistent IP3 of 20 dBm across the operating band. This self- biased LNA is ideal for hybrid and MCM assemblies due to its compact size, wideband performance, single +3V supply operation, and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). Noise Figure: 2.3 dB Gain: 22 dB OIP3: 20 dBm Single Supply: +3V @ 53 mA 50 Ohm Matched Input/Output Small size: 2.53 x 0.98 x 0.10 mm Electrical Specifications, T A = +25° C, Vdd 1, 2, 3 = +3V Typical Applications The HMC565 is ideal for use as a LNA or driver ampli- fier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment and Sensors • Military & Space Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 - 12 12 - 20 GHz Gain 20 23 17 21 dB Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB/ °C Noise Figure 2.3 2.8 2.5 3.0 dB Input Return Loss 15 12 dB Output Return Loss 15 10 dB Output Power for 1 dB Compression (P1dB) 7 10 7 10 dBm Saturated Output Power (Psat) 12 12 dBm Output Third Order Intercept (IP3) 17 20 17 20 dBm Supply Current (Idd)(Vdd = +3V) 53 53 mA |
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