AT9919 datasheet(4/16 Pages) MICROCHIP

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AT9919

DS20005595A-page 4

 2016 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

VIN and CS to GND ...................................................................................................................................–0.3V to +45V

VDD, GATE, RAMP, DIM, ADIM to GND......................................................................................................–0.3V to +6V

CS to VIN .....................................................................................................................................................–1V to +0.3V

Operating Temperature Range............................................................................................................. –40°C to +125°C

Junction Temperature.............................................................................................................................................150°C

Storage Temperature Range ...................................................................................................................–65°C to 150°C

Continuous Power Dissipation (TA = +25°C) .......................................................................................................... 1.6W

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Specifications: VIN = 12V, VDIM = VDD, VRAMP = GND, CVDD = 1 µF, RCS = 0.5Ω, TA = TJ = –40ºC to

+125ºC (Note 1) unless otherwise noted.

Parameter

Sym.

Min.

Typ. Max.

Unit

Conditions

Input DC Supply Voltage Range

VIN

4.5

—

DC input voltage

Internally Regulated Voltage

VDD

4.5

—

5.5

VIN = 6V to 40V

Supply Current

IIN

—

1.5

GATE open

Shutdown Supply Current

IIN, SDN

—

900

µA

DIM < 0.7V

Current Limit

IIN, LIM

—

VIN = 4.5V, VDD = 0V

—

VIN = 4.5V, VDD = 4V

Oscillator Frequency

fOSC

—

MHz

VDD Undervoltage Lockout

Threshold

UVLO

—

4.5

VDD rising

VDD Undervoltage Lockout

Hysteresis

UVLOHYST

—

500

—

VDD falling

SENSE COMPARATOR

Sense Voltage Threshold High

VCS(HI)

198

230

257

(VIN – VCS) rising

Sense Voltage Threshold Low

VCS(LO)

147

170

195

(VIN – VCS) falling

Average Reference Voltage

VCS(AVG)

186

200

214

VCS(AVG) = 0.5VCS(HI) + 0.5VCS(LO)

Propagation Delay to Output

High

tDPDH

—

Falling edge of



VIN – VCS = VRS(LO) – 70 mV

Propagation Delay to Output

Low

tDPDL

—

Rising edge of



VIN – VCS = VRS(HI) + 70 mV

Current Sense Input Current

ICS

—

µA

VIN – VCS = 200 mV

Current Sense Threshold



Hysteresis

VCS(HYST)

—

DIM INPUT

Pin DIM Input High Voltage

VIH

2.2

—

Pin DIM Input Low Voltage

VIL

—

0.7

Turn-on Time

tON

—

100

—

DIM rising edge to

VGATE = 0.5 x VDD, CGATE = 2 nF

Turn-off Time

tOFF

—

100

—

DIM falling edge to



VGATE = 0.5 x VDD, CGATE = 2 nF

Note 1:

Limits obtained by design and characterization.

2: For design guidance only

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