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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SD1241 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1241 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1241 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 60 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 60 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 60V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 3V 70 280 hFE-2 DC Current Gain IC= 5A ; VCE= 3V 30 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 10 MHz |
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