 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
AS8F2M32 датащи(PDF) 4 Page - Micross Components |
|
|
|||||||||||||||||||||||||||||
AS8F2M32 датащи(HTML) 4 Page - Micross Components |
|
|
4 / 12 page  FLASH AS8F2M32 AS8F2M32 Rev. 2.7 01/10 Micross Components reserves the right to change products or specifications without notice. 4 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (V CC = 5.0V, -55°C < TA < +125°C) MIN MAX MIN MAX MIN MAX Write Cycle Time tAVAV tWC 90 120 150 Chip Select Setup Time tELWL tCS 000 Write Enable Pulse Width tWLWH tWP 45 50 50 Address Setup Time tAVWL tAS 000 Data Setup Time tDVWH tDS 45 50 50 Data Hold Time tWHDX tDH 000 Address Hold Time tWLAX tAH 45 50 50 Write Enable Pulse Width High tWHWL tWPH 20 20 20 Duration of Byte Progreamming Operation 1 tWHWH1 300 300 300 Sector Erase 2 tWHWH2 15 15 15 Read Recovery Time before Write tGHWL 000 VCC Setup Time tVCS 50 50 50 Chip Programming Time 3 44 44 44 Chip Erase Time 4 256 256 256 Output Enable Hold Time 5 tOEH 10 10 10 RESET\ Pulse Width tRP 500 500 500 Read Cycle Time tAVAV tRC 90 120 150 Address Access Time tAVQV tACC 90 120 150 Chip Select Access Time tELQV tCE 90 120 150 Output Enable to Output Valid tGLQV tOE 40 50 55 Chip Select High to Output High 6 tEHQZ tDF 20 30 35 Output Enable High to Output High 6 tGHQZ tDF 20 30 35 Output Hold from Adresses, CS\ or OE\ Change, whichever is First tAXQX tOH 000 RST Low to Read Mode 6 tReady 20 20 20 Write Cycle Time tAVAV tWC 90 120 150 Write Enable Setup Time tWLEL tWS 000 Chip Select Pulse Width tELEH tCP 45 50 50 Address Setup Time tAVEL tAS 000 Data Setup Time tDVEH tDS 45 50 50 Data Hold Time tEHDX tDH 000 Address Hold Time tELAX tAH 45 50 50 Chip Select Pulse Width High tEHEL tCPH 20 20 20 Duration of Byte Progreamming Operation 1 tWHWH1 300 300 300 Sector Erase Time 2 tWHWH2 15 15 15 Read Recovery Time tGHEL 000 Chip Programming Time 3 44 44 44 Chip Erase Time 4 256 256 256 Output Enable Hold Time 5 tOEH 10 10 10 CS\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS) WE\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS) READ-ONLY OPERATIONS SYM -90 -120 -150 PARAMETER |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
