AS5LC1008 datasheet(2/11 Pages) MICROSS

2 / 11 page

SRAM

AS5LC1008

Rev. 1.4 10/13

Micross Components reserves the right to change products or speciﬁcations without notice.

ABSOLUTE MAXIMUM RATINGS*

Terminal Voltage with Respect to GND (V

TERM).........................................................................................-0.5V to VCC + 0.5V

Temperature Under Bias (T

BIAS).........................................................................................................................-55°C to +125°C

Storage Temperature (T

STG)................................................................................................................................-65°C to +150°C

Power Dissipation (P

T)...........................................................................................................................................................1.0W

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operation section of this speciﬁcation is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

FUNCTIONAL BLOCK DIAGRAM

TRUTH TABLE

Mode

WE\

CE\

OE\

I/O Operation

Not Selected

(Power-down)

High-Z

Output Disabled

High-Z

Read

DOUT

Write

DIN

A0 - A16

VCC

GND

I/O0 - I/O7

CE\

OE\

WE\

DECODER

128K x 8

MEMORY ARRAY

I/O DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

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