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STM32F301C6 датащи(PDF) 83 Page - STMicroelectronics |
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STM32F301C6 датащи(HTML) 83 Page - STMicroelectronics |
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83 / 135 page ![]() DocID025146 Rev 6 83/135 STM32F301x6 STM32F301x8 Electrical characteristics 114 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 6.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Table 50. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8/72 MHz SEMI Peak level VDD = 3.3 V, TA = 25 °C, LQFP64 package compliant with IEC 61967-2 0.1 to 30 MHz 5 dBµV 30 to 130 MHz 6 130 MHz to 1GHz 28 SAE EMI Level 4 - Table 51. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to JESD22-A114 All 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESD STM5.3.1 LQFP64, WLCSP49 C3 250 V All other C4 500 1. Guaranteed by characterization results. |
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