STM32L475VG datasheet(85/193 Pages) STMICROELECTRONICS

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STM32L475xx

Electrical characteristics

181

6.3.2

Operating conditions at power-up / power-down

The parameters given in Table 23 are derived from tests performed under the ambient

temperature condition summarized in Table 22.

6.3.3

Embedded reset and power control block characteristics

The parameters given in Table 24 are derived from tests performed under the ambient

temperature conditions summarized in Table 22: General operating conditions.

4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.3: Thermal characteristics).

5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.3:

Thermal characteristics).

Table 23. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

µs/V

VDDA fall time rate

∞

tVDDUSB

VDDUSB rise time rate

∞

µs/V

VDDUSB fall time rate

∞

Table 24. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions(1)

Min

Typ

Max

Unit

tRSTTEMPO(2)

Reset temporization after

BOR0 is detected

VDD rising

250

400

μs

VBOR0(2)

Brown-out reset threshold 0

Rising edge

1.62

1.66

1.7

Falling edge

1.6

1.64

1.69

VBOR1

Brown-out reset threshold 1

Rising edge

2.06

2.1

2.14

Falling edge

1.96

2.04

VBOR2

Brown-out reset threshold 2

Rising edge

2.26

2.31

2.35

Falling edge

2.16

2.20

2.24

VBOR3

Brown-out reset threshold 3

Rising edge

2.56

2.61

2.66

Falling edge

2.47

2.52

2.57

VBOR4

Brown-out reset threshold 4

Rising edge

2.85

2.90

2.95

Falling edge

2.76

2.81

2.86

VPVD0

Programmable voltage

detector threshold 0

Rising edge

2.1

2.15

2.19

Falling edge

2.05

2.1

VPVD1

PVD threshold 1

Rising edge

2.26

2.31

2.36

Falling edge

2.15

2.20

2.25

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