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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F745VG датащи(PDF) 128 Page - STMicroelectronics |
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STM32F745VG датащи(HTML) 128 Page - STMicroelectronics |
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128 / 227 page  Electrical characteristics STM32F745xx STM32F746xx 128/227 DocID027590 Rev 4 Low-speed internal (LSI) RC oscillator Figure 35. LSI deviation versus temperature 5.3.11 PLL characteristics The parameters given in Table 43 and Table 44 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 17. Table 42. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed by characterization results. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA Table 43. Main PLL characteristics Symbol Parameter Conditions Min Typ Max Unit fPLL_IN PLL input clock(1) -0.95(2) 12.10 MHz fPLL_OUT PLL multiplier output clock - 24 - 216 fPLL48_OUT 48 MHz PLL multiplier output clock - - 48 75 fVCO_OUT PLL VCO output - 100 - 432 |
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