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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F745VG датащи(PDF) 127 Page - STMicroelectronics |
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STM32F745VG датащи(HTML) 127 Page - STMicroelectronics |
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127 / 227 page  DocID027590 Rev 4 127/227 STM32F745xx STM32F746xx Electrical characteristics 195 5.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Figure 34. HSI deviation versus temperature 1. Guaranteed by characterization results. Table 41. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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