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STM32F427AI датащи(PDF) 129 Page - STMicroelectronics

номер детали STM32F427AI
подробное описание детали  ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT
PDF  239 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32F427AI датащи(HTML) 129 Page - STMicroelectronics

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STM32F427xx STM32F429xx
Electrical characteristics
197
tBE
Bank erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 100K erase operations.
Table 49. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
6.9
-
s
tBE
Bank erase time
-
6.9
-
s
Vprog
Programming voltage
2.7
-
3.6
V
VPP
VPP voltage range
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
--
1
hour
Table 48. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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