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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F427AI датащи(PDF) 121 Page - STMicroelectronics |
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STM32F427AI датащи(HTML) 121 Page - STMicroelectronics |
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121 / 239 page  DocID024030 Rev 9 121/238 STM32F427xx STM32F429xx Electrical characteristics 197 Figure 30. Typical application with a 32.768 kHz crystal 6.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Table 41. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user-trimming step (2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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