HAL115

MICRONAS INTERMETALL

3

Functional Description

This Hall effect sensor is a monolithic integrated circuit

that switches in response to magnetic fields. If a

magnetic field with flux lines at right angles to the

sensitive area is applied to the sensor, the biased Hall

plate forces a Hall voltage proportional to this field. The

Hall voltage is compared with the actual threshold level

in the comparator. The temperature-dependent bias

increases the supply voltage of the Hall plates and

adjusts the switching points to the decreasing induction

of magnets at higher temperatures. If the magnetic field

exceeds the threshold levels, the open drain output

switches to the appropriate state. The built-in hysteresis

eliminates oscillation and provides switching behavior of

output without bounce. The output is short-circuit

protected by limiting high currents and by sensing ex-

cess temperature. Shunt protection devices clamp

with external series resistors. Reverse current is limited

No external reverse protection diode is needed at the

Temperature

Dependent

Bias

Hysteresis

Control

Comparator

Output

1

OUT

3

Hall Plate

GND

2

Fig. 2: HAL 115 block diagram

HAL 115

Short Circuit &

Overvoltage

Protection

Reverse

Voltage &

Overvoltage

Protection

Outline Dimensions

1.5

3.0

4.0

±0.25

1.7

0.4

10

°

10

°

0.4

0.4

Fig. 3:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g

Dimensions in mm

12

2

3

0.7

0.95

2.25

sensitive area

position of hall sensor

referenced to the

center of package

x = 0

± 0.1 mm

y = 0.3

± 0.1 mm

(0.4 mm x 0.2 mm)

branded side

top view

Fig. 4:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g

Dimensions in mm

2.03

branded side

0.36

0.8

0.3

45

°

1.0

12.7

min.

1.27

1.27

2.54

123

0.4

sensitive area

position of hall sensor

referenced to the

center of package

x = 0

± 0.1 mm

y = 0.5

± 0.1 mm

(0.4 mm x 0.2 mm)