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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F091CB датащи(PDF) 71 Page - STMicroelectronics |
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STM32F091CB датащи(HTML) 71 Page - STMicroelectronics |
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71 / 127 page  DocID026284 Rev 3 71/127 STM32F091xB STM32F091xC Electrical characteristics 99 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 18. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.8 Internal clock source characteristics The parameters given in Table 41 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions. The provided curves are characterization results, not tested in production. gm Oscillator transconductance LSEDRV[1:0]=00 lower driving capability 5- - µA/V LSEDRV[1:0]= 01 medium low driving capability 8- - LSEDRV[1:0] = 10 medium high driving capability 15 - - LSEDRV[1:0]=11 higher driving capability 25 - - tSU(LSE)(3) Startup time VDDIOx is stabilized - 2 - s 1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”. 2. Guaranteed by design, not tested in production. 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) Symbol Parameter Conditions(1) Min(2) Typ Max(2) Unit |
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