GMR B6

Data Sheet

3

2000-07-01

Application Hints

The application mode of the GMR position sensor is preferably as a bridge or halfbridge

circuit. In every case this type of circuit compensates for the

T

R

the application circuit and can be done for example with a NIC circuit. When operated

over a complete 360

° turn, a total signal of ≈ 20 mV/V is achieved at 25 °C with a

halfbridge. The output signal is doubled to of

≈ 40 mV/V when a fullbridge circuit is used.

In the case of linear position sensing, the electrical circuit remains unchanged.

Maximum Ratings

Parameter

Symbol

Value

Unit

Operating temperature

T

A

– 40…+ 150

°C

Storage temperature

T

stg

– 50…+ 150

°C

Supply voltage

V

1

7V

Thermal conductivity

G

> 4

mW/K

Magnetic field

1)

H

rot

< 15

kA/m

1)

larger fields may reduce the magnetoresistive effect irreversibly

Characteristics (

T

Parameter

Symbol

Value

Unit

Nominal supply voltage

V

1N

5V

Basic resistance

R

0

> 700

Ω

Magnetoresistive effect

H

0

>4

%

Output signal fullbridge

@

V

V

OUT

> 200

mV

Offset voltage

@

V

|

V

mV

Temperature coefficient of

basic resistance

TC

R0

+ 0.09 … + 0.12

%/K

Temperature coefficient of

magnetoresistance

– 0.12 … – 0.09

%/K

Temperature coefficient of

magnetoresistive effect

– 0.27 … – 0.23

%/K