2SD1031 datasheet(1/2 Pages) ISC

номер детали	2SD1031

подробное описание детали	Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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isc Silicon NPN Darlington Power Transistor

2SD1031

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 2.0V(Max)@ IC= 4A

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

PC

Collector Power Dissipation

@Ta=25℃

2

W

Collector Power Dissipation

@TC=25℃

50

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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Аналогичное описание - 2SD1031

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