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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SB823 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB823 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB823 DESCRIPTION · Collector-Emitter Breakdown Voltage V(BR)CEO = -100V(Min) · Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -6A · Wide Area of Safe Operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SB823 |
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Аналогичное описание - 2SB823 |
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