2SB817C datasheet(1/2 Pages) ISC

номер детали	2SB817C

подробное описание детали	Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website： www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SB817C

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= -2.0V(Max.) @IC= -5A

·

Good Linearity of hFE

·

High Current Capability

·

Wide Area of Safe Operation

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for audio frequency amplifier output

stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-12

A

ICP

Collector Current-Pulse

-20

A

PC

Collector Power Dissipation

@ TC=25℃

120

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SB817C

производитель	номер детали	датащи	подробное описание детали
ON Semiconductor	2SB817C	80Kb / 4P	Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L January, 2014
Sanyo Semicon Device	2SB817C	450Kb / 2P	140V / 12A, AF 80W Output Applications
ON Semiconductor	2SB817C-1E	80Kb / 4P	Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L January, 2014

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Аналогичное описание - 2SB817C

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NEC	2SA1142	64Kb / 1P	PNP SILICON POWER TRANSISTOR
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