IPL60R199CP_15 datasheet(5/13 Pages) INFINEON

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600V CoolMOS

™ CP Power Transistor

IPL60R199CP

Electrical characteristics

Final Data Sheet

Rev. 2.3, 2015-10-23

Electrical characteristics

Electrical characteristics, at

Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

(BR)DSS

600

GS=0 V, ID=0.25 mA

Gate threshold voltage

GS(th)

2.5

3.5

DS=VGS, ID=0.66 mA

Zero gate voltage drain current

DSS

µA

DS=600 V, VGS=0 V,

j=25 °C

DS=600 V, VGS=0 V,

j=150 °C

Gate-source leakage current

GSS

100

GS=20 V, VDS=0 V

Drain-source on-state resistance

DS(on)

0.18

0.199

GS=10 V, ID=9.9 A,

j=25 °C

0.47

GS=10 V, ID=9.9 A,

j=150 °C

Gate resistance

f=1 MHz, open drain

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Input capacitance

iss

1520

GS=0 V, VDS=100 V,

f=1 MHz

Output capacitance

oss

Effective output capacitance,

energy related

o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

o(er)

GS=0 V,

DS=0...480 V

Effective output capacitance, time

o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

o(tr)

180

D=constant, VGS=0 V

DS=0...480V

Turn-on delay time

d(on)

DD=400 V,

GS=13 V, ID=9.9 A,

G= 3.3#

"see table 16)

Rise time

Turn-off delay time

d(off)

Fall time

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