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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F334 датащи(PDF) 67 Page - STMicroelectronics |
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STM32F334 датащи(HTML) 67 Page - STMicroelectronics |
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67 / 115 page  DocID025409 Rev 5 67/115 STM32F334x4 STM32F334x6 STM32F334x8 Electrical characteristics 100 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz) Symbol Parameter Conditions(1) 1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”. Min. (2) 2. Guaranteed by design, not tested in production. Typ. Max.( 2) Unit IDD LSE current consumption LSEDRV[1:0]=00 lower driving capability -0.5 0.9 µA LSEDRV[1:0]=10 medium low driving capability -- 1 LSEDRV[1:0]=01 medium high driving capability -- 1.3 LSEDRV[1:0]=11 higher driving capability -- 1.6 gm Oscillator transconductance LSEDRV[1:0]=00 lower driving capability 5- - µA/V LSEDRV[1:0]=10 medium low driving capability 8- - LSEDRV[1:0]=01 medium high driving capability 15 - - LSEDRV[1:0]=11 higher driving capability 25 - - tSU(LSE)(3) 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer. Startup time VDD is stabilized - 2 - s |
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