DYA3400GD datasheet(2/4 Pages) DYELEC

номер детали	DYA3400GD

подробное описание детали	N-Channel High Density Trench MOSFET

PDF	4 Pages

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производитель	DYELEC [DIYI Electronic Technology Co., Ltd.]

домашняя страница	http://www.dyelec.com/

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ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

Parameter

Symbol

Condition

Min Typ

Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V , ID = 250uA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V , VGS = 0V

Gate-Body Leakage

IGSS

VGS = ±12V , VDS = 0V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

VDS = VGS , ID = 250uA

0.7

0.9

1.4

Drain-Source On-State Resistance

RDS(on)

VGS = 10V , ID = 5.8A

Ω

VGS = 4.5V , ID = 5.0A

VGS = 2.5V , ID = 4.0A

Forward Transconductance

gfs

VDS = 5V , ID = 5A

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0V , IS = 1.0A

1.2

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS = 15V , VGS = 0V

f = 1.0MHz

551

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 15V , ID = 1A

VGEN = 10V

RL = 15 Ω

RGEN = 6 Ω

6.5

Rise Time

Turn-Off Delay Time

tD(OFF)

28.6

Fall Time

2.6

Total Gate Charge

VDS = 15V

ID = 3A

VGS = 10V

13.2

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

1.7

Note

b. Pulse Test

Pulse width ≤ 300us , Duty Cycle ≤ 2% .

c. Guaranteed by design , not subject to production testing .

N-Channel High Density Trench MOSFET

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