AOT5B65M1 datasheet(2/9 Pages) AOSMD

2 / 9 page

Symbol

Min

Typ

Max

Units

BV CES

Collector-Emitter Breakdown Voltage

650

TJ=25°C

1.57

1.98

TJ=125°C

1.87

TJ=175°C

2.05

TJ=25°C

1.8

2.25

TJ=125°C

1.79

TJ=175°C

1.73

V GE(th)

Gate-Emitter Threshold Voltage

5.1

TJ=25°C

TJ=125°C

100

TJ=175°C

5000

I GES

Gate-Emitter leakage current

±100

g FS

4.1

C ies

348

C oes

C res

Q g

Q ge

Q gc

6.5

I C(SC)

R g

Ω

t D(on)

8.5

t r

t D(off)

106

t f

E on

0.08

E off

0.07

E total

0.15

t rr

195

Q rr

0.24

µC

I rm

2.78

t D(on)

t r

t D(off)

130

t f

E on

0.09

E off

0.12

E total

0.21

t rr

273

Q rr

0.42

µC

I rm

3.6

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

TJ=175°C

IF=5A, dI/dt=200A/µs, VCC=400V

Diode Reverse Recovery Charge

Diode Peak Reverse Recovery Current

Turn-On DelayTime

TJ=175°C

VGE=15V, VCC=400V, IC=5A,

RG=60Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-On Energy

Diode Reverse Recovery Time

Turn-Off Energy

Total Switching Energy

Turn-Off Energy

Turn-On Rise Time

Turn-On DelayTime

SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

Diode Peak Reverse Recovery Current

TJ=25°C

IF=5A, dI/dt=200A/µs, VCC=400V

Turn-Off Delay Time

TJ=25°C

VGE=15V, VCC=400V, IC=5A,

RG=60Ω

Total Switching Energy

Turn-Off Fall Time

Turn-On Energy

Gate to Collector Charge

Gate to Emitter Charge

VGE=15V, VCC=520V, IC=5A

SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)

Short circuit collector current

VGE=15V, VCC=400V,

tsc≤5us, TJ≤175°C

Total Gate Charge

Gate resistance

VGE=0V, VCC=0V, f=1MHz

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Reverse Transfer Capacitance

VGE=0V, VCC=25V, f=1MHz

VCE=20V, IC=5A

VCE=0V, VGE=±30V

Forward Transconductance

V CE(sat)

IC=1mA, VGE=0V, TJ=25°C

VGE=15V, IC=5A

VCE=650V, VGE=0V

VGE=0V, IC=5A

Collector-Emitter Saturation Voltage

Output Capacitance

Input Capacitance

I CES

Zero Gate Voltage Collector Current

V F

Diode Forward Voltage

DYNAMIC PARAMETERS

µA

VCE=5V, IC=1mA

Rev.1.0: April 2015

www.aosmd.com

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