BCF060T

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)

The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate

width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise

while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either

wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and

increased reliability.

Product Features

•

25.0 dBm Typical Output Power

•

12.5 dB Typical Power Gain @ 12 GHz

•

Low Phase Noise

•

0.3 X 600 Micron Recessed Gate

Applications

•

Commercial

•

Military / Hi-Rel

•

Test & Measurement

PARAMETER/TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNIT

100

170

240

mA

Gm

70

100

mS

Vp

-3.5

-2.0

V

-15

-11

V

-10

-7

V

Thermal Resistance (Au-Sn Eutectic Attach)

75

° C/W

www.berex.com

BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595

January 2015

Specifications are subject to change without notice. ©BeRex 2015

Rev. 1.3