ZXMC3AM832

PROVISIONAL ISSUE E - JULY 2004

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a)(f)

83.3

°C/W

Junction to Ambient

(b)(f)

51

°C/W

Junction to Ambient

(c)(f)

125

°C/W

Junction to Ambient

(d)(f)

111

°C/W

Junction to Ambient

(d)(g)

73.5

°C/W

Junction to Ambient

(e)(g)

41.7

°C/W

THERMAL RESISTANCE

Notes

(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The

copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed

pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached

attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.

(f) For a dual device with one active die.

(g) For dual device with 2 active die running at equal power.

(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.

(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm

wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.

PARAMETER

SYMBOL

N-Channel

P-Channel

UNIT

Drain-Source Voltage

30

-30

V

Gate-Source Voltage

20

20

V

(b)(f)

(b)(f)

(a)(f)

3.7

3.0

2.9

-2.7

-2.2

-2.1

A

A

Pulsed Drain Current

12.4

-9.2

A

Continuous Source Current (Body Diode)

(b)(f)

2.4

-2.8

A

Pulsed Source Current (Body Diode)

12.4

-9.2

A

Power Dissipation at TA=25°C

(a)(f)

Linear Derating Factor

1.5

12

W

mW/°C

Power Dissipation at TA=25°C

(b)(f)

Linear Derating Factor

2.45

19.6

W

mW/°C

Power Dissipation at TA=25°C

(c)(f)

Linear Derating Factor

1

8

W

mW/°C

Power Dissipation at TA=25°C

(d)(f)

Linear Derating Factor

1.13

8

W

mW/°C

Power Dissipation at TA=25°C

(d)(g)

Linear Derating Factor

1.7

13.6

W

mW/°C

ABSOLUTE MAXIMUM RATINGS