IPN50R2K0CE datasheet(3/13 Pages) INFINEON

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500VCoolMOSªCEPowerTransistor

IPN50R2K0CE

Rev.2.1,2016-06-13

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

3.6

2.3

TC = 25°C

TC = 100°C

Pulsed drain current

ID,pulse

6.1

TC = 25°C

Avalanche energy, single pulse

EAS

ID = 0.8A; VDD = 50V

Avalanche energy, repetitive

EAR

0.05

ID = 0.8A; VDD = 50V

Avalanche current, repetitive

IAR

0.8

MOSFET dv/dt ruggedness

dv/dt

V/ns

VDS=0...400V

Gate source voltage

VGS

-20

-30

static;

AC (f>1 Hz)

Power dissipation

Ptot

5.0

TC=25°C

Operating and storage temperature

Tj,Tstg

-40

150

°C

Continuous diode forward current

1.0

TC=25°C

Diode pulse current

IS,pulse

6.1

TC = 25°C

Reverse diode dv/dt

dv/dt

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C,

tcond<2

µs

Maximum diode commutation speed

dif/dt

500

µs VDS=0...400V,ISD<=IS,Tj=25°C,

tcond<2

µs

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - solder

point

RthJS

°C/W -

Thermal resistance, junction - ambient

for minimal footprint

RthJA

160

°C/W minimal footprint

Thermal resistance, junction - ambient

soldered on copper area

RthJA

°C/W

Device on 40mm*40mm*1.5 epoxy

PCB FR4 with 6cm

2 (one layer 70

µm

thick) copper area for drain

connection and cooling. PCB is

vertical without blown air.

Soldering temperature, wavesoldering

only allowed at leads

Tsold

260

°C

reflow MSL3

1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5

2) Pulse width tp limited by Tj,max

3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

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