R2000F

Tel: 0086-20-8184 9628

01

GUANGZHOU * CHINA

www.getedz.com

sales@getedz.com

China Tel:

4001 83 84 85

DO-41 Series

Lead Diameter 0.9mm

200mA 2.0kV 500nS-HIGH VOLTAGE DIODE

Features

Applications

Maximum Ratings and Characteristics

Absolute Maximum Ratings

High reliability resin molded type high voltage

mesa type silicon chip by epoxy resin.

diode

in small size package which is sealed a multilayed

Outline Drawings :

Items

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

Junction Temperature

Allowable Operation Case Temperature

Symbols

Tc

Condition

Ta=25°C,Resistive Load

200

125

125

-65 to +175

Units

kV

mA

°C

°C

°C

Storage Temperature

R2000F

2.0

Ta=25°C,8.3 ms

Ta=25°C,

Maximum Reverse Recovery Time

Trr

at 25°C;

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Items

Maximum Forward Voltage Drop

Maximum Reverse Current

Symbols

Conditions

at 100°C,V

Units

V

uA

uA

Junction Capacitance

Cj

6.0

R2000F

2.0

100

5.0

pF

R

500

nS

I =0.5A;

F

I =1.0A;

R

I =0.25A;

rr

30

.107(2.7)

DIA

.080(2.0)

1.0(25.4)

MIN

.205(5.2)

.166(4.2)

.034(0.9)

DIA

.028(0.7)

1.0(25.4)

MIN

*Fast switching

*Low leakage

*High reliability

*High current capability

*High surge capability

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Mounting position: Any

* Weight: 0.3 gram

* Lead: MIL-STD-202E, Method 208 guaranteed

* Polarity: Color band denotes cathode end