APM4953 datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.2 - Feb., 2003

APM4953

www.anpec.com.tw

Symbol

Parameter

Rating

Unit

TA = 25°C

2.5

Maximum Power Dissipation

TA = 100°C

1.0

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

RθJA*

Thermal Resistance - Junction to Ambient

°C/W

Electrical Characteristics

(TA=25°C unless otherwise noted)

Absolute Maximum Ratings (Cont.) (T

A = 25°C unless otherwise noted)

APM4953

Symbol

Parameter

Test Condition

Min.

Typ=.

Max.

Unit

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=-250µA

-30

IDSS

Zero Gate Voltage Drain

Current

VDS=-24V , VGS=0V

-1

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250µA

-1

-1.5

-2

IGSS

Gate Leakage Current

VGS=±25V , VDS=0V

±100

VGS=-10V , IDS=-4.9A

RDS(ON)

Drain-Source On-state

Resistance>

VGS=-4.5V , IDS=-3.6A

mΩ

VSD

Diode Forward Voltage>

ISD=-1.7A , VGS=0V

-0.7

-1.3

Dynamic=

Total Gate Charge

22.3

Qgs

Gate-Source Charge

4.65

Qgd

Gate-Drain Charge

VDS=-15V , IGS=-10V

lD=-4.6A

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=-15V , ID=-2A ,

VGEN=-10V , RG=6Ω

RL=7.5Ω

Ciss

Input Capacitance

1260

Coss

Output Capacitance

340

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=-25V

Frequency=1.0MHz

220

Notes

: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

: Guaranteed by design, not subject to production testing

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