TP0610K datasheet(2/4 Pages) VISHAY

2 / 4 page

TP0610K

Vishay Siliconix

New Product

www.vishay.com

11-2

Document Number: 71411

S-04279—Rev. C, 16-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = –10 µA

–60

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 µA

–1

–3.0

VDS = 0 V, VGS = "20 V

"10

VDS = 0 V, VGS = "10 V

"200

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "10 V, TJ = 85_C

"500

VDS = 0 V, VGS = "5 V

"100

VDS = –50 V, VGS = 0 V

–25

Zero Gate Voltage Drain Current

IDSS

VDS = –50 V, VGS = 0 V, TJ = 85_C

–250

VDS = –10 V, VGS = –4.5 V

–50

On-State Drain Currenta

ID(on)

VDS = –10 V, VGS = –10 V

–600

VGS = –4.5 V, ID = –25 mA

Drain-Source On-Resistancea

rDS(on)

VGS = –10 V, ID = –500 mA

DS(on)

VGS = –10 V, ID = –500 mA, TJ = 125_C

Forward Transconductancea

gfs

VDS = –10 V, ID = –100 mA

Diode Forward Voltagea

VSD

IS = –200 mA, VGS = 0 V

–1.4

Dynamic

Total Gate Charge

1.7

Gate-Source Charge

Qgs

VDS = –30 V, VGS = –15 V, ID ^ –500 mA

0.26

Gate-Drain Charge

Qgd

0.46

Input Capacitance

Ciss

Output Capacitance

Coss

VDS = –25 V, VGS = 0 V, f = 1 MHz

Reverse Transfer Capacitance

Crss

Switchingb

Turn-On Time

tON

VDD = –25 V, RL = 150 W

Turn-Off Time

tOFF

ID ^ –200 mA, VGEN = –10 V

RG = 10 W

Notes

Pulse test: PW

v300 ms duty cycle v2%.

TPJO60

Switching time is essentially independent of operating temperature.

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