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WS9822B датащи(PDF) 5 Page - List of Unclassifed Manufacturers

номер детали WS9822B
подробное описание детали  Non-isolated Buck High Precision Three-stage Dimming LED Driver
PDF  11 Pages
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производитель  ETC2 [List of Unclassifed Manufacturers]
домашняя страница  
Logo ETC2 - List of Unclassifed Manufacturers

WS9822B датащи(HTML) 5 Page - List of Unclassifed Manufacturers

  WS9822B Datasheet HTML 1Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 2Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 3Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 4Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 5Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 6Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 7Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 8Page - List of Unclassifed Manufacturers WS9822B Datasheet HTML 9Page - List of Unclassifed Manufacturers Next Button
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www.winsemi.com
Tel : +86-755-8250 6288
Fax : +86-755-8250 6299
5/11
WS9822B Product Description
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Electrical Characteristics
Conditions: TA=25℃,VCC=14V(Unless otherwise specified)
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
Power Supply Section
VCC_CLAMP
VCC Clamp Voltage
IVCC=1mA
16
V
ICC_CLAMP
VCC Clamp Current
5
20
mA
UVLO_OFF
Chip Startup Voltage
VCC Rising
15.8
V
UVLO_ON _HYS
Under voltage
Protection Hysteresis
VCC Falling
3.5
V
IST
Startup Current
VCC=UVLO_off-0.5V
65
130
195
uA
IOP
Operating Current
120
uA
Current Detection Section
VCS_TH
Threshold Voltage for Peak
Current Limitation
400
mV
VCS_DIM
Threshold Value for
Dimming Test
114
mV
TLEB
Leading Edge Blanking Time
for Current Sense
350
ns
TDELAY
Switch Off Delay Time
200
ns
Switching Frequency Section
TOFF_MIN
Minimum OFF Time
3
us
TOFF_MAX
Maximum OFF Time
240
us
TON_MAX
Maximum On Time
40
us
VROVP
ROVP PIN Voltage
0.5
V
DIM Dimming Section
TRESET
Shutdown Reset Time
5
S
MOSFET Section
IDSS
Power MOSFET Drain
Leakage Current
VGS=0V,VDS=500V
10
uA
BVDSS
Drain-Source Breakdown
Voltage
500
V
RDS_ON
Static Drain-source
On-state resistance
4.8
6
Ω
Thermal section
TREG
Thermal Regulation
Temperature
150



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