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PI2007 датащи(PDF) 15 Page - Vicor Corporation |
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PI2007 датащи(HTML) 15 Page - Vicor Corporation |
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15 / 19 page ![]() Picor Corporation • picorpower.com PI2007 Rev 1.3 Page 15 of 19 VC bias through Constant current circuit Select an NPN transistor with VCEO equal or higher than the input voltage (Vin) plus any expected transient voltage and capable of handling the expected maximum power dissipation. Any NPN transistor with VCEO ≥ 100V in a small footprint is suitable. An exemplary NPN is FJV1845 from Fairchild: From the FJV1845 datasheet: NPN Silicon Transistor VCEO= 120V Collector-Emitter maximum voltage IC = 50mA maximum collector current hFE = 150 minimum at IC=3mA VBE(sat)= 0.55V to 0.65V Base-Emitter saturation voltage at 25°C Select Zener Diode: Select the Zener diode with low bias current, a Zener diode with VZ=10 in small foot print is suitable for this application. An exemplary Zener diode MM3Z10VST1 from ON Semiconductor From the MM3Z10VST1 datasheet: 10V, 200mW Zener Diode VZ= 9.80V to 10.2V Zener voltage range IR = 10μA will hold the Zener breakdown voltage at 9.8V k mA V V I on V V R MAX VC BE MIN Z LIMIT 33 . 4 1 . 2 7 . 0 8 . 9 ) ( _ _ Or 4.32kΩ 1% A mA h I I MIN FE MAX C MAX B 33 . 23 150 5 . 3 _ _ _ RZ Calculation: Use 100μA as minimum for the Zener diode reverse leakage current and Q2 base current combined. k A V V I I V V R MAX B Z MAX Z MIN in Z 258 100 2 . 10 36 _ _ _ Select RZ= 249kΩ 1% Maximum Q2 collector current: mA k V V R V V I MIN LIMIT MIN BE MAX Z MAX C 29 . 2 98 . 0 * 32 . 4 50 . 0 2 . 10 _ _ _ _ Maximum Q2 power dissipation )] ( [ _ _ _ 2 MAX EB MIN Z CLM VC MAX MAX C Q V V V Vin I Pd mW V V V V mA Pd Q 37 . 91 )] 7 . 0 8 . 9 ( 11 60 [ 29 . 2 2 The transistor Power De-rating vs. temperature curve in the manufacturer datasheet shows that the device can operate up to 110°C. Figure 18: PI2007 in high side +48V application, VC is biased through constant current circuit. Fault Indication: PI2007 SGND pin in this application is floating and FT is referenced to SGND. The FT output can be referenced to system return (RTN) by adding a level shift circuit as shown in Figure 19. Q1: 2SA1579T106R, 120V PNP transistor from Rohm. Q2: DTC114EET1G, 50V NPN with bias resistors from ON semiconductor. D1: 30V general purpose diode. Figure 19: FT level shift circuitry |
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