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APM9926 датащи(PDF) 3 Page - Anpec Electronics Coropration

номер детали APM9926
подробное описание детали  N-Channel Enhancement Mode MOSFET
PDF  11 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM9926 датащи(HTML) 3 Page - Anpec Electronics Coropration

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Copyright
 ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw
3
APM9926/C
APM9926/C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS=0V , IDS=250µA
20
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS=16V , VGS=0V
1
µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS , IDS=250
µA
0.5
0.7
1.5
V
I
GSS
Gate Leakage Current
V
GS=
±8V , V
DS=0V
±100
nA
V
GS=4.5V , IDS=6A
28
32
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS=2.5V , IDS=5.2A
38
45
m
Ω
V
SD
a
Diode Forward Voltage
I
SD=1.7A , VGS=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
10
Q
gs
Gate-Source Charge
3.6
Q
gd
Gate-Drain Charge
V
DS=10V , IDS= 6A
V
GS=4.5V ,
2
nC
t
d(ON)
Turn-on Delay Time
17
T
r
Turn-on Rise Time
15
t
d(OFF)
Turn-off Delay Time
45
T
f
Turn-off Fall Time
V
DD=10V , IDS=1A ,
V
GEN=4.5V , RG=0.2
Ω
25
ns
C
iss
Input Capacitance
520
C
oss
Output Capacitance
110
C
rss
Reverse Transfer Capacitance
V
GS=0V
V
DS=15V
Frequency=1.0MHz
70
pF
Notes
a : Pulse test ; pulse width
≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing
Electrical Characteristics Cont. (T
A = 25°C unless otherwise noted)



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