BFS17P datasheet(1/7 Pages) INFINEON

номер детали	BFS17P

подробное описание детали	NPN Silicon RF Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2011-07-20

1

BFS17P

1

2

3

NPN Silicon RF Transistor

• For broadband amplifiers up to 1 GHz at

collector currents from 1 mA to 20 mA

• Pb-free (RoHS compliant) package

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFS17P

MCs

1 = B

2 = E

3 = C

SOT23

Maximum Ratings

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

15

V

Collector-base voltage

VCBO

25

Emitter-base voltage

VEBO

2.5

Collector current

IC

25

mA

Peak collector current

ICM

50

Total power dissipation1)

TS ≤ 55 °C

Ptot

280

mW

Junction temperature

TJ

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

TStg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

≤ 340

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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