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NLAS4599DFT2 датащи(PDF) 2 Page - ON Semiconductor |
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NLAS4599DFT2 датащи(HTML) 2 Page - ON Semiconductor |
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2 / 11 page ![]() NLAS4599 http://onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Positive DC Supply Voltage −0.5 to +7.0 V VIS Analog Input Voltage (VNO or VCOM) −0.5 ≤ VIS ≤ VCC )0.5 V VIN Digital Select Input Voltage −0.5 ≤ VI ≤ + 7.0 V IIK DC Current, Into or Out of Any Pin $50 mA PD Power Dissipation in Still Air SC−88 TSOP−6 200 200 mW TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1mm from Case for 10 seconds 260 °C TJ Junction Temperature Under Bias 150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) 2000 200 N/A V ILATCH−UP Latch−Up Performance Above VCC and Below GND at 125°C (Note 4) $300 mA qJA Thermal Resistance SC−88 TSOP−6 333 333 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN Digital Select Input Voltage GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range −55 +125 °C tr, tf Input Rise or Fall Time, SELECT VCC = 3.3 V + 0.3 V VCC = 5.0 V + 0.5 V 0 0 100 20 ns/V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature 5C Time, Hours Time, Years 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 1 1 10 100 1000 TIME, YEARS FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR Figure 3. Failure Rate vs. Time Junction Temperature |
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