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IM801B датащи(PDF) 1 Page - MMD Components |
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IM801B датащи(HTML) 1 Page - MMD Components |
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1 / 9 page ![]() MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz IM801 Series ILSI America Phone 775-851-8880 ● Fax 775-851-8882 ●email: e-mail@ilsiamerica.com ● www.ilsiamerica.com Specifications subject to change without notice Rev: 01/30/16_A Page 1 of 9 Features: MEMS Technology Direct pin to pin drop-in replacement for industry-standard packages LVCMOS/HCMOS Compatible Output Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2 mm x mm Pb-free, Halogen-free, Antimony-free RoHS and REACH compliant Fast delivery times Typical Applications: Fibre Channel Server and Storage GPON, EPON 100M / 1G /10G Ethernet Electrical Specifications: Frequency Range 1.000 MHz to 110.000MHz Frequency Stability See Part Number Guide Inclusive of Initial Tolerance, Operating Temperature Range, Load, Voltage, and Aging Operating Temperature See Part Number Guide Supply Voltage (Vdd) 10% See Part Number Guide Current Consumption 3.8 mA typ./ 4.5 mA max 3.7 mA typ./ 4.2 mA max 3.5 mA typ./ 4.1 mA max No load condition, F = 20 MHz, Vdd = +2.8 V to +3.3 V No load condition, F = 20 MHz, Vdd = +2.5 V No load condition, F = 20 MHz, Vdd = +1.8 V OE Disable Current 4.2 mA max 4.0 mA max Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state Vdd = +1.8 V, OE = GND, Output in high-Z state Standby Current 2.1 µA typ./ 4.3 µA max 1.1 µA typ. / 2.5 µA max 0.2 µA typ. / 1.3 µA max ST = GND, Vdd = +2.8 V to +3.3V ST = GND, Vdd = +2.5 V ST = GND, Vdd = +1.8 V Waveform Output LVCMOS / HCMOS Symmetry 45%/55% 50% of waveform all Vdds Rise / Fall Time 1.0 nSec typ./ 2.0 nSec max 1.3 nSec typ./ 2.5 nSec max Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform Vdd = +1.8 V from 20% to 80% of waveform Logic “1” 90% of Vdd min Logic “0” 10% of Vdd max Input High Voltage 70% of Vdd min Pin 1, OE or ST Input Low Voltage 30% of Vdd max Pin 1, OE or ST Input Pull-up Impedance 50kΩ min / 87kΩ typ. 150kΩ max 2.0MΩ min Pin 1, OE logic high or logic low or ST logic high Pin 1, ST logic Low Startup Time 5.0 mSec max Measured from the time Vdd reaches its rated min value Enable/Disable time 130 nSec max F = 110 Mhz. For other frequencies, T_oe =100 nSec = 3 cycles Resume Time 5.0 mSec max Measured from the time ST pin crosses 50% threshold RMS Period Jitter 1.8pSec typ./ 3.0pSec max 1.8pSec typ./ 3.0pSec max. F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V F = 75 MHz, Vdd = +1.8 V Peak-to-peak Period Jitter 12.0 pSec typ./ 25.0 pSec max 14.0 pSec typ./ 30.0 pSec max F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V F = 75 MHz, Vdd = +1.8 V RMS Phase Jitter (random) 0.5pSec typ./ 0.9 pSec max 1.3pSec typ./ 2.0pSec max F = 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz F = 75 MHz, Integration Bandwidth = 12 kHz to 20.0 MHz Notes: All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated. Typical values are at +25ºC and nominal supply voltage. Absolute Maximum Limits Storage Temperature -65ºC to +150ºC Supply Voltage (Vdd) -0.5 VDC to 4.0 VDC Electrostatic Discharge 2000 V max Solder Temperature (follow standard Pb free soldering guidelines) 260ºC max Junction Temperature 150ºC max |
Аналогичный номер детали - IM801B |
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Аналогичное описание - IM801B |
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