BFP620F datasheet(1/9 Pages) INFINEON

номер детали	BFP620F

подробное описание детали	Low Noise SiGe:C Bipolar RF Transistor

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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2013-09-09

1

BFP620F

1

2

4

3

Low Noise SiGe:C Bipolar RF Transistor

• High gain low noise RF transistor

• Based on Infineon's reliable high volume

Silicon Germanium technology

• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz

Outstanding noise figure NFmin = 1.3 dB at 6 GHz

• Maximum stable gain

Gms = 21 dB at 1.8 GHz

Gma = 10 dB at 6 GHz

• Pb-free (RoHS compliant) and halogen-free thin small

flat package (1.4 x 0.8 x 0.59 mm) with visible leads

• Qualification report according to AEC-Q101 available

1

3

4

2

Direction of Unreeling

Top View

XYs

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP620F

R2s

1=B

2=E

3=C

4=E

-

TSFP-4

Maximum Ratings

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

TA = 25 °C

TA = -55 °C

VCEO

2.3

2.1

V

Collector-emitter voltage

VCES

7.5

Collector-base voltage

VCBO

7.5

Emitter-base voltage

VEBO

1.2

Collector current

IC

80

mA

Base current

IB

3

Total power dissipation1)

TS ≤ 96°C

Ptot

185

mW

Junction temperature

TJ

150

°C

Storage temperature

TStg

-55 ... 150

1TS is measured on the emitter lead at the soldering point to the pcb

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Infineon Technologies A...	BFP620F	158Kb / 6P	NPN Silicon Germanium RF Transistor Apr-21-2004
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Аналогичный номер детали - BFP620F

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