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STW8A2PD датащи(PDF) 4 Page - Seoul Semiconductor |
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STW8A2PD датащи(HTML) 4 Page - Seoul Semiconductor |
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4 / 31 page ![]() www.seoulsemicon.com Product Data Sheet STW8A2PD – Mid-Power LED “제품 명 – 제품 군” 을 기입하십시오. 제품 군은 홈페이지 응용분야 분류기준을 참고한다. (예) SZ5M0WWC9 – High-power LED 4 Font 글씨체 표(Table) - 제목: Arial 10pt, 표 내부: Arial 8pt, 본문(Body) – Arial 9pt Revision numbering 기준: • 가스펙은 0.0 부터 시작 0.x…. • Final 승인원: 1.0 부터 시작 • 기존에서 일부 수정: +0.1 • 새로운 Data 추가 /또는 기존 것 삭제: +1.0 수정일자 표기형식; YYYY-MM-DD (예) 2013-04-01 Rev1.1, Sep 7, 2016 Performance Characteristics 전기적 특성 및 광 특성 스펙 테이블 (1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. (2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (3) Tolerance is 2.0 on CRI measurements. (4) Thermal resistance is junction to Solder. (5) I FP conditions with pulse width ≤10ms and duty cycle ≤10% (6) The products are sensitive to static electricity and must be carefully taken when handling products • Calculated performance values are for reference only. • All measurements were made under the standardized environment of Seoul Semiconductor. Table 3. Characteristics, I F=65mA, Tj= 25ºC, RH30% Table 4. Absolute Maximum Ratings Notes : Parameter Symbol Value Unit Forward Current I F 300 mA Power Dissipation P D 1.0 W Junction Temperature T j 125 ºC Operating Temperature T opr -40 ~ + 85 ºC Storage Temperature T stg -40 ~ + 100 ºC Parameter Symbol Value Unit Min. Typ. Max. Forward Current I F - 65 - mA Forward Voltage V F - 2.9 3.2 V Luminous Intensity[1] (5,000K)[2] Iv - 10.3 - cd CRI [3] R a 80 83 90 Viewing Angle 2 Θ 1/2 - 120 - Deg. Storage Temperature T stg - 40 - + 85 ºC Thermal resistance (J to S) [4] Rθ J-S - 15 - ℃/W |
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