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THS4151 датащи(PDF) 2 Page - Texas Instruments

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номер детали THS4151
подробное описание детали  HIGH-SPEED DIFFERENTIAL I/O AMPLIFIERS
PDF  27 Pages
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производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
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THS4151 датащи(HTML) 2 Page - Texas Instruments

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THS4150, THS4151
HIGHSPEED DIFFERENTIAL I/O AMPLIFIERS
SLOS321D − MAY 2000 − REVISED JANUARY 2004
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
EVALUATION
TA
SMALL OUTLINE
MSOP PowerPAD
MSOP
EVALUATION
MODULES
TA
SMALL OUTLINE
(D)
(DGN)
SYMBOL
(DGK)
SYMBOL
MODULES
0
°C to 70°C
THS4150CD
THS4150CDGN
AQB
THS4150CDGK
ATT
THS4150EVM
0
°C to 70°C
THS4151CD
THS4151CDGN
AQD
THS4151CDGK
ATU
THS4151EVM
−40
°C to 85°C
THS4150ID
THS4150IDGN
AQC
THS4150IDGK
AST
−40
°C to 85°C
THS4151ID
THS4151IDGN
AQE
THS4151IDGK
ASU
absolute maximum ratings over operating free–air temperature range (unless otherwise noted)
Supply voltage, VCC− to VCC+
±16.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI
±VCC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO (see Note 1)
150 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID
±6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
See Dissipation Rating Table
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum junction temperature, TJ (see Note 2)
150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum junction temperature, continuous operation, long term reliability, TJ (see Note 3)
125
°C
. . . . . . . .
Operating free-air temperature, TA:C suffix
0
°C to 70°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix
−40
°C to 85°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, Tstg
−65
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 Inch) from case for 10 seconds
300
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD ratings:
HBM
2500 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CDM
1500 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MM
200 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: The THS415x may incorporate a PowerPad
on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could
permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the PowerPad
thermally enhanced package.
NOTE 2: The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
NOTE 3: The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
DISSIPATION RATING TABLE
PACKAGE
θJA ‡
θJC
POWER RATING§
PACKAGE
θJA ‡
(
°C/W)
θJC
(
°C/W)
TA = 25°C
TA = 85°C
D
97.5
38.3
1.02 W
410 mW
DGN
58.4
4.7
1.71 W
685 mW
DGK
260
54.2
385 mW
154 mW
‡ This data was taken using the JEDEC standard High−K test PCB.
§ Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to
substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or
below 125
°C for best performance and long term reliability.
recommended operating conditions
MIN
TYP
MAX
UNIT
Supply voltage, VCC+ to VCC−
Dual supply
±2.5
±15
V
Supply voltage, VCC+ to VCC−
Single supply
5
30
V
Operating free-air temperature, TA
C suffix
0
70
°C
Operating free-air temperature, TA
I suffix
−40
85
°C
PowerPAD is a trademark of Texas Instruments.



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