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2SB508 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SB508
подробное описание детали  isc Silicon PNP Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB508 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB508
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max) @IC= -2.0A
·
Complement to Type 2SD314
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for the output stage of 15W to 25W AF power
amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-3.0
A
ICM
Collector Current-Peak
-6.0
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
4.16
℃
/W


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