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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SB435 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB435 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB435 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) · Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -1A · Complement to Type 2SD235 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IB Base Current-Continuous -0.3 A PC Collector Power Dissipation @Ta=25℃ 1.5 W Collector Power Dissipation @Tc=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Аналогичный номер детали - 2SB435 |
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Аналогичное описание - 2SB435 |
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