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BFP450 датащи(PDF) 8 Page - Infineon Technologies AG

номер детали BFP450
подробное описание детали  Linear Low Noise Silicon Bipolar RF Transistor
PDF  28 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP450 датащи(HTML) 8 Page - Infineon Technologies AG

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BFP450
Features
Datasheet
8
Revision 1.2, 2013-07-29
2
Features
Applications Examples
Driver amplifier
•
ISM bands 434 and 868 MHz
•
1.9 GHz cordless phones
•
CATV LNA
Transmitter driver amplifier
•
2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
•
TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
•
Highly linear low noise driver amplifier for all RF frontends up to
3 GHz
•
Based on Infineon´s reliable high volume 25 GHz silicon bipolar
technology
•
Output compression point OP1dB = 19 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
•
Output 3rd order intermodulation point OIP3 = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
•
Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
•
Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
•
Pb-free (RoHS compliant) and halogen-free package with
visible leads
•
Qualification report according to AEC-Q101 available
Product Name
Package
Pin Configuration
Marking
BFP450
SOT343
1 = B
2 = E
3 = C
4 = E
ANs
1
2
3
4



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