2

TC1550

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

500

-

-

V

V

V

GS(th)

Gate threshold voltage

2.0

-

4.0

V

V

ΔV

GS(th)

Change in V

-

-3.8

-5.0

V

I

GSS

Gate body leakage current

-

-

100

nA

V

I

DSS

Zero gate voltage drain current

-

-

10

µA

V

-

-

1.0

mA

V

V

I

D(ON)

On-state drain current

-

100

-

mA

V

150

350

-

V

R

DS(ON)

Static drain-to-source

on-state resistance

-

45

-

Ω

V

-

40

60

V

ΔR

DS(ON)

Change in R

-

1.0

1.7

V

G

FS

Forward transconductance

50

100

-

mmho

V

C

ISS

Input capacitance

-

45

55

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

8.0

10

C

RSS

Reverse transfer capacitance

-

2.0

5.0

t

d(ON)

Turn-on delay time

-

-

10

ns

V

I

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-off delay time

-

-

10

t

f

Fall time

-

-

10

V

SD

Diode forward voltage drop

-

0.8

-

V

V

t

rr

Reverse recovery time

-

300

-

ns

V

N-Channel Switching Waveforms and Test Circuit

Input

Pulse

Generator

D.U.T.

OUTPUT

10V

0V

0V

Input

Output

10%

90%

90%

10%

90%

10%

Notes:

All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)

All AC parameters sample tested.

1.

2.