APM9435 datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.4 - Mar., 2003

APM9435

www.anpec.com.tw

Symbol

Parameter

Rating

Unit

A = 25°C

2.5

Maximum Power Dissipation

A = 100°C

1.0

)TSTG

Maximum Operating and Storage Junction Temperature

-55 to 150

°C

RθJA

Thermal Resistance - Junction to Ambient

°C/W

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

APM9435

Symbol

Parameter

Test Condition

Min.

Typ

a. Max.

Unit

Static

DSS

Drain-Source Breakdown Voltage

GS=0V, ID=-250µA

-30

DSS

Zero Gate Voltage Drain Current

DS=24V, VGS=0V

-1

GS(th)

Gate Threshold Voltage

DS=VGS, ID=250µA

-1

-3

GSS

Gate Leakage Current

GS=±25V, VDS =0V

±100

GS=-10V, ID=-4.6A

DS(ON)

Drain-Source On-state Resistance b

GS=-4.5V, ID=-2A

Ω

Diode Forward Voltage b

SD=-3A, VGS=0V

-0.6

-1.3

Dynamic

Total Gate Charge

22.5

Gate-Source Charge

4.5

Gate-Drain Charge

DS=-15V, VGS=-10V,

D=-4.6A

d(ON)

Turn-on Delay Time

Turn-on Rise Time

d(OFF)

Turn-off Delay Time

Turn-off Fall Time

DD=-25V, RL=12.5Ω,

D=-2A , VGEN=-10V,

G=6Ω,

iss

Input Capacitance

845

oss

Output Capacitance

120

rss

Reverse Transfer Capacitance

GS=0V, VDS=-25V

Frequency = 1.0MHZ

Notes

a : Guaranteed by design, not subject to production testing

b : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

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