3DG13007 datasheet(1/2 Pages) ISC

номер детали	3DG13007

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

1

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

3DG13007

DESCRIPTION

·

Collector–Emitter Sustaining Voltage

: VCEO(SUS) = 400V(Min.)

·

Collector Saturation Voltage

: VCE(sat) = 2.0(Max) @ IC= 5.0A

·

Switching Time

: tf= 0.9μs(Max.)@ IC= 5.0A

APPLICATIONS

·

Designed for use in high-voltage, high-speed, power swit-

ching in inductive circuit, they are particularly suited for

115 and 220V switchmode applications such as switching

regulators,inverters,Motor controls,Solenoid/Relay drivers

and deflection circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-peak

16

A

IB

Base Current

4

A

IBM

Base Current-Peak

8

A

IE

Emitter Current

12

A

IEM

Emitter Current-Peak

24

A

PC

Collector Power Dissipation

TC=25℃

80

W

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.56

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃

/W

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