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LM1865 датащи(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM1865
подробное описание детали  Advanced FM IF System
PDF  16 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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LM1865 датащи(HTML) 3 Page - National Semiconductor (TI)

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Electrical Characteristics Test Circuit TA e 25 C Va e 12V S1 in position 2 S2 in position 1 and S3 in
position 2 unless indicated otherwise (Continued)
Parameter
Conditions
Min
Typ
Max
Units
DYNAMIC CHARACTERISTICS
fMOD e 400 Hz fo e 107 MHz Deviation e g75 kHz (Continued)
Pin 13 MuteStop Threshold Voltage
V14 e V9 S1 in Position 4
220
mV
S2 in Position 3
V13 where V16
x Low
Amount of Muting (LM1965 Only)
S2 in Position 4 S1 in Position 1 VIF e 10 mV
66
dB
Amount of Muting with Pin 13 and
S1 in Position 1
0
dB
Pin 16 Grounded
V14 e V9 VIF e 10 mV
Narrow Band AGC Threshold
Increase IF Input until I AGC e 01 mA
100
210
300
m
Vrms
Pin 20 e 30 mVrms
Wide Band AGC Threshold
VIF e 100 mVrms
5
12
22
mVrms
Increase Signal to Pin 20 until IAGC e 01 mA
Pin 18 Low Output Voltage
VIN Pin 20 e 100 mV VIF e 100 mVrms
02
05
V
(LM1865 and LM1965 only)
Pin 18 High Output Voltage (LM2065 only)
VIN Pin 20 e 100 mV VIF e 100 mVrms (See Note 6)
117
V
Pin 8 Meter Output Voltage
VIF e 10 mV
01
V
VIF e 300 mV
11
V
VIF e 3 mV
26
V
Note 1
Above TA e 25 C derate based on TJ(max) e 150 C and iJA e 60 CW
Note 2
All data sheet specifications are for Va e 12V may change slightly with supply
Note 3
When the IF is preceded by 22 dB gain in the buffer excellent system sensitivity is achieved
Note 4
Measured with a notch at 60 Hz and 20 Hz to 100 kHz bandwidth
Note 5
FM modulate RF source with a 100 kHz audio signal and find what modulation level expressed as kHz deviation results in V16
x12V
Test Circuit
TLH7509 – 2
FIGURE 2
3



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