MCP1661 datasheet(3/34 Pages) MICROCHIP

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DS20005315B-page 3

MCP1661

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VSW – GND .....................................................................+36V

EN, VIN – GND...............................................................+6.0V

VFB.................................................................................+1.3V

Power Dissipation ....................................... Internally Limited

Storage Temperature .................................... -65°C to +150°C

Ambient Temperature with Power Applied .... -40°C to +125°C

Operating Junction Temperature................... -40°C to +150°C

ESD Protection On All Pins:

HBM ................................................................. 4 kV

MM ..................................................................300V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated

the

operational

sections

this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC AND AC CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature

TA =+25°C, VIN = 3.3V, IOUT =20mA, VOUT =12V, CIN =COUT = 10 µF, X7R ceramic, L = 4.7 µH.

Boldface specifications apply over the controlled TA range of -40°C to +125°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Voltage Range

VIN

2.4

—

5.5

Note 1

Undervoltage Lockout

(UVLO)

UVLOSTART

—2.3

—

VIN rising,

IOUT =1 mA resistive load

UVLOSTOP

—1.85

—

VIN falling,

IOUT =1 mA resistive load

Output Voltage Adjust Range

VOUT

——

Note 1

Maximum Output Current

IOUT

—125

—

3.3V VIN, 12V VOUT

200

—

5.0V VIN, 12V VOUT

100

—

4.2V VIN, 24V VOUT

Feedback Voltage

VFB

1.190

1.227

1.264

VFB Accuracy

-3

—

Feedback Input Bias Current

IVFB

—0.005

—

µA

No Load Input Current

IIN0

—

250

—

µA

Device switching, no load,

3.3V VIN, 12V VOUT (Note 2)

Shutdown Quiescent Current

IQSHDN

—

200

—

EN = GND,

feedback divider current not

included (Note 3)

Peak Switch Current Limit

IN(MAX)

—1.3

—

Note 4

NMOS Switch Leakage

INLK

—0.4

—

µA

VIN =VSW =5V; VOUT =5.5V

VEN =VFB =GND

NMOS Switch ON Resistance

RDS(ON)

—0.8

—



VIN =5V, VOUT = 12V,

IOUT =100 mA (Note 4)

Note 1:

Minimum input voltage in the range of VIN (VIN <5.5V < VOUT) depends on the maximum duty cycle

(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:

VINmin =VOUT x(1– DCMAX).

IIN0 varies with input and output voltage (Figure 2-8). IIN0 is measured on the VIN pin when the device is

switching (EN = VIN), at no load, with RTOP = 120 k and RBOT =1.05 M.

IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the

feedback resistors (RTOP +RBOT) disconnected from VOUT.

Determined by characterization, not production tested.

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