PSS8550C datasheet(2/10 Pages) PHILIPS

2 / 10 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

PNP medium power 25 V transistor

PSS8550

FEATURES

• High total power dissipation

• High current capability.

APPLICATIONS

• Medium power switching and muting

• Amplification

• Portable radio output amplifier (class-B, push-pull).

DESCRIPTION

PNP transistor in a SOT54 (TO-92) plastic package.

NPN complement: PSS8050.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER

MARKING CODE

PSS8550C

S8550C

PSS8550D

S8550D

SYMBOL

PARAMETER

MAX.

UNIT

VCEO

collector-emitter voltage

−25

collector current (DC)

−1.5

DESCRIPTION

collector

base

emitter

handbook, halfpage

MSB033

Fig.1

Simplified outline (SOT54).

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed

conditions: pulse width tp ≤ 1 s; duty cycle δ≤ 0.75%.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−40

VCEO

collector-emitter voltage

open base

−−25

VEBO

emitter-base voltage

open collector

−−6V

collector current (DC)

−−1.5

ICM

peak collector current

−−2A

base current (DC)

−−300

IBM

peak base current

−−1A

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

850

Tamb ≤ 25 °C; note 2

−

900

Tamb ≤ 25 °C; note 3

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

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